BiTeI is a layered bismuth telluro-iodide built from sequentially stacked Bi, Te, and I atomic layers; its intrinsic structure lacks inversion symmetry, giving rise to an exceptionally strong bulk Rashba spin splitting. This giant Rashba effect produces strong spin–momentum locking and can drive a pressure-induced topological transition (toward a topological insulator), making it a representative material for studying Rashba spintronics, spin–orbit-coupling physics, and pressure-tuned topological transitions. Growth method: Chemical vapor transport (CVT). Sample specifications: Individual crystals measure approximately 3 mm, with a purity of up to 99.9999% (6N), and multiple high-quality single-crystal pieces included in each package. Exfoliation: Easy — readily cleaved into thin flakes by standard mechanical exfoliation.
