HfTe₂ (Hafnium Ditelluride)

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HfTe₂ is a 1T-phase layered transition-metal dichalcogenide and a semimetal (with valence–conduction band overlap, typically behaving as a low-carrier-density semimetal), regarded as a topology-related Dirac semimetal candidate. It features strong in-plane transport anisotropy and high mobility, its layered structure is readily exfoliable, and it serves as a candidate material for studying topological semimetal transport and 2D electronics. Growth method: Chemical vapor transport (CVT). Sample specifications: Individual crystals measure approximately 3 mm, with a purity of up to 99.9999% (6N), and multiple high-quality single-crystal pieces included in each package. Exfoliation: Easy — readily cleaved into thin flakes by standard mechanical exfoliation. Show more